We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Modulation of resistive switching in Pt/LiCoO<sub>2</sub>/SiO<sub>2</sub>/Si stacks.
- Authors
Hu, Qi; Huang, Anping; Zhang, Xinjiang; Li, Runmiao; Gao, Qin; Wang, Meng; Wang, Mei; Shi, Hongliang; Xiao, Zhisong; Chu, Paul K.
- Abstract
Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.
- Subjects
ANNEALING of metals; CRYSTAL structure; RESISTIVE force; NANOPARTICLES; LITHIUM-ion batteries
- Publication
Journal of Materials Science: Materials in Electronics, 2019, Vol 30, Issue 5, p4753
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-00768-5