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- Title
Photoelectric conversion enhancement of Ag modified p-type Cu<sub>2</sub>O/n-type ZnO transparent heterojunction device.
- Authors
Zhao, Chuang; Pan, Jiaqi; Wang, Beibei; Dong, Zongjun; Jiang, Ziyuan; Wang, Jingjing; Song, Changsheng; Zheng, Yingying; Li, Chaorong
- Abstract
The Ag modified transparent Cu2O/ZnO p-n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious photoelectric conversion enhancement (PCE of 0.48%, ten times) than those of the unmodified heterojunction. Through analysis, the enhancement of the photoelectric conversion could be attributed to the remarkable Cu2O/ZnO p-n junction and Ag0 nanoparticles with the performances of photoelectron donor and surface enhanced plasmonic absorption.
- Subjects
ZINC oxide; SILVER; COPPER; HETEROJUNCTIONS; MAGNETRON sputtering
- Publication
Journal of Materials Science: Materials in Electronics, 2018, Vol 29, Issue 23, p20485
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-018-0183-x