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- Title
Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface.
- Authors
Klimko, G. V.; Evropeytsev, E. A.; Sitnikova, A. A.; Gronin, S. V.; Sedova, I. V.; Sorokin, S. V.; Ivanov, S. V.
- Abstract
The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.
- Subjects
QUANTUM wells; WELL water; HYDRAULIC structures; QUANTUM dots; PSEUDOMORPHS
- Publication
Acta Physica Polonica: A, 2014, Vol 126, Issue 5, p1184
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.126.1184