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- Title
Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge.
- Authors
Mamutin, V. V.; Zhmerik, V. N.; Shubina, T. V.; Toropov, A. A.; Lebedev, A. V.; Vekshin, V. A.; Ivanov, S. V.; Kop’ev, P. S.
- Abstract
It is shown that GaN films can be grown by molecular-beam epitaxy with plasma activation of the nitrogen by a magnetron rf discharge in a specially constructed coaxial source with capacitive coupling. A growth rate of ∼0.1 µm/h is obtained on GaAs and sapphire substrates, and ways are found for optimizing the design of the plasma source in order to increase the growth rate. The electrophysical and luminescence properties of undoped epitaxial films are investigated at temperatures ranging all the way to room temperature.
- Subjects
MOLECULAR beam epitaxy; MAGNETRONS
- Publication
Technical Physics Letters, 1998, Vol 24, Issue 6, p467
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1262149