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- Title
Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires.
- Authors
Khan, Muhammad Bilal; Deb, Dipjyoti; Kerbusch, Jochen; Fuchs, Florian; Löffler, Markus; Banerjee, Sayanti; Mühle, Uwe; Weber, Walter M.; Gemming, Sibylle; Schuster, Jörg; Erbe, Artur; Georgiev, Yordan M.
- Abstract
Featured Application: This work has implications for the fabrication of nickel silicide–silicon Schottky junction-based devices such as reconfigurable field-effect transistors. We present results of our investigations on nickel silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the application of SiNWs in reconfigurable field-effect transistors. Silicidation is performed using a rapid thermal annealing process on the SiNWs fabricated by electron beam lithography and inductively-coupled plasma etching. The effects of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process are studied. Scanning electron microscopy and transmission electron microscopy are performed to study Ni diffusion, silicide phases, and silicide–silicon interfaces. Control over the silicide phase is achieved together with atomically sharp silicide–silicon interfaces. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge.
- Subjects
SILICON nanowires; RAPID thermal processing; SCANNING transmission electron microscopy; ELECTRON beam lithography; INDUCTIVELY coupled plasma mass spectrometry; FIELD-effect transistors; TRANSISTORS; TRANSMISSION electron microscopy
- Publication
Applied Sciences (2076-3417), 2019, Vol 9, Issue 17, p3462
- ISSN
2076-3417
- Publication type
Article
- DOI
10.3390/app9173462