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- Title
Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template.
- Authors
Chang, Hsun-Ming; Chan, Philip; Lim, Norleakvisoth; Rienzi, Vincent; Gordon, Michael J.; DenBaars, Steven P.; Nakamura, Shuji
- Abstract
Electrically driven c-plane InGaN-based blue edge emitting laser diodes on a strain-relaxed template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer was 26.6%, and the root mean square (RMS) roughness of the surface morphology was 0.65 nm. The laser diodes (LDs) on the SRT laser at 459 nm had a threshold current density of 52 kA/cm2 under the room temperature pulsed operation. The internal loss of the LDs on the SRT was 30–35 cm−1. Regardless of the high threshold current density, this is the first demonstrated laser diode using the strain-relaxed method on c-plane GaN.
- Subjects
BLUE lasers; ROOT-mean-squares; SURFACE roughness; SURFACE morphology; INDIUM gallium nitride; SEMICONDUCTOR lasers
- Publication
Crystals (2073-4352), 2022, Vol 12, Issue 9, pN.PAG
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst12091208