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- Title
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric.
- Authors
Yeom, Min Jae; Yang, Jeong Yong; Lee, Chan Ho; Heo, Junseok; Chung, Roy Byung Kyu; Yoo, Geonwook
- Abstract
AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO2 gate dielectric, however, is known to degrade the oxide/nitride interface due to the formation of Ga-containing oxide. In this work, the undoped HfO2 gate dielectric was spike-annealed at 600 °C after the film was deposited by atomic layer deposition to improve the ferroelectricity without degrading the interface. As a result, the subthreshold slope of AlGaN/GaN MOS-HEMTs close to 60 mV/dec and on/off ratio>109 were achieved. These results suggest optimizing the HfO2/nitride interface can be a critical step towards a low-loss high-power switching device.
- Subjects
MODULATION-doped field-effect transistors; INDIUM gallium zinc oxide; GALLIUM nitride; ATOMIC layer deposition; DIELECTRICS; FERROELECTRICITY
- Publication
Micromachines, 2021, Vol 12, Issue 12, p1441
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi12121441