We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors (Adv. Mater. Interfaces 10/2022).
- Authors
Kim, Wonsik; Lee, Won‐June; Kwak, Taehyun; Baek, Seokhyeon; Lee, Seung‐Hoon; Park, Sungjun
- Abstract
Keywords: indium-gallium-zinc oxide; inverters; oxygen vacancy; solution-processed thin-film transistors; ultraviolet ozone treatment; Vth modulation EN indium-gallium-zinc oxide inverters oxygen vacancy solution-processed thin-film transistors ultraviolet ozone treatment Vth modulation 1 1 1 09/11/23 20220401 NES 220401 B Controlled Oxygen Vacancy in Metal Oxides via UV/Ozone Treatment b In article number 2200032, Wonsik Kim, Sungjun Park, and co-workers report rapid modulation of the threshold voltage of sol-gel indium-gallium-zinc-oxide (IGZO) thin-film transistors via UV/ozone surface treatment. Indium-gallium-zinc oxide, inverters, oxygen vacancy, solution-processed thin-film transistors, ultraviolet ozone treatment, Vth modulation On the cover: the reactive ozone species under UV light can reduce oxygen vacancy and accelerate metal-oxygen bond formation, resulting in different channel conductance.
- Subjects
THRESHOLD voltage; OZONE; INDIUM gallium zinc oxide; TRANSISTORS; METALLIC oxides; SURFACE preparation
- Publication
Advanced Materials Interfaces, 2022, Vol 9, Issue 10, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.202270051