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- Title
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET.
- Authors
Atamuratov, Atabek E.; Khalilloev, Mahkam M.; Yusupov, Ahmed; García-Loureiro, A. J.; Chedjou, Jean Chamberlain; Kyandoghere, Kyamakya
- Abstract
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect.
- Subjects
METAL oxide semiconductor field-effect transistors; RANDOM noise theory; FIELD-effect transistors
- Publication
Applied Sciences (2076-3417), 2020, Vol 10, Issue 15, p5327
- ISSN
2076-3417
- Publication type
Article
- DOI
10.3390/app10155327