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- Title
Bottom‐Up Synthesized Nanoporous Graphene Transistors (Adv. Funct. Mater. 47/2021).
- Authors
Mutlu, Zafer; Jacobse, Peter H.; McCurdy, Ryan D.; Llinas, Juan P.; Lin, Yuxuan; Veber, Gregory C.; Fischer, Felix R.; Crommie, Michael F.; Bokor, Jeffrey
- Abstract
Keywords: bottom-up on-surface synthesis; electronic structure; field-effect transistors; graphene nanoribbons; nanoelectronics; nanoporous graphene; Raman spectroscopy; transport calculations EN bottom-up on-surface synthesis electronic structure field-effect transistors graphene nanoribbons nanoelectronics nanoporous graphene Raman spectroscopy transport calculations 1 1 1 11/23/21 20211118 NES 211118 B Nanoporous Graphene Transistors b Bottom-up synthesis has recently enabled the fabrication of nanoporous graphene with atomically precise pores and consequent uniform band gap. In article number 2103798, Jeffrey Bokor and co-workers use this strategy to turn molecules into nanoporous graphene, which is subsequently transferred to devices and turned into field-effect transistors. Bottom-up on-surface synthesis, electronic structure, field-effect transistors, graphene nanoribbons, nanoelectronics, nanoporous graphene, Raman spectroscopy, transport calculations.
- Subjects
TRANSISTORS; GRAPHENE; FIELD-effect transistors; BAND gaps; NANOPOROUS materials
- Publication
Advanced Functional Materials, 2021, Vol 31, Issue 47, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202170348