Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleIsotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range.AuthorsDupuy, Jean-Claude; Dubois, Christiane; Prudon, Gilles; Gautier, Brice; Kögler, Reinhard; Akhmadaliev, Shavkat; Perrat-Mabilon, Angela; Peaucelle, ChristophePublicationSurface & Interface Analysis: SIA, 2011, Vol 43, Issue 1/2, p137ISSN0142-2421Publication typeArticleDOI10.1002/sia.3657