We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.
- Authors
Warecki, Zoey; Oleshko, Vladimir; Celio, Kimberlee; Armstrong, Andrew; Allerman, Andrew; Talin, A. Alec; Cumings, John
- Abstract
The article explores measuring the minority carrier diffusion length in gallium nitride (n-GaN) for high-performance electronics using bulk STEM Electron-beam induced current (EBIC), overcoming the overestimation issue in scanning electron microscope.
- Subjects
CHARGE carrier lifetime; SCANNING transmission electron microscopy; SCHOLARSHIPS; MATERIALS science
- Publication
Microscopy & Microanalysis, 2019, p1842
- ISSN
1431-9276
- Publication type
Article
- DOI
10.1017/S1431927618009698