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- Title
Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se).
- Authors
Hiramatsu, H.; Ueda, K.; Takafuji, K.; Ohta, H.; Hirano, M.; Kamiya, T.; Hosono, H.
- Abstract
Electrical and photoluminescence properties were investigated for epitaxial films of layered oxychalcogenides, LnCuOCh (Ln = La, Pr, and Nd, Ch = S or Se). Epitaxial films of Mg 10 at. % doped LaCuOS1-xSex are the first demonstration of degenerate conduction with high hole concentration >1020 cm-3 in wide gap p-type semiconductors. Ion substitution varied the excitonic emission energy from 3.21 eV to 2.89 eV while lanthanide and chalcogenide ion substitutions displayed the opposite tendency against cell volume. These unique properties are discussed with respect to the electronic structure originating from the layered crystal structure.
- Subjects
SEMICONDUCTORS; SEMICONDUCTOR industry; HIGH technology industries; ELECTRONICS; CRYSTALS; ELECTRIC conductivity
- Publication
Applied Physics A: Materials Science & Processing, 2004, Vol 79, Issue 4-6, p1521
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-004-2837-1