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- Title
TOF-SIMS 5 instrument sensitivity to matrix elements in GeSi Layers: Analysis based on recording of complex secondary ions.
- Authors
Drozdov, M.; Drozdov, Yu.; Lobanov, D.; Novikov, A.; Yurasov, D.
- Abstract
GeSi layers are investigated by means of secondary ion mass spectrometry (SIMS). Experimental results obtained with the use of a TOF-SIMS 5 instrument are presented. To surmount the so-called matrix effect, SIMS analysis is performed by using complex secondary ions: Ge, CsGe, and CsGe.
- Publication
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2011, Vol 5, Issue 3, p591
- ISSN
1027-4510
- Publication type
Article
- DOI
10.1134/S1027451011060073