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Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 908, doi. 10.1134/S1063785008110023
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Yagovkina, M. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 924, doi. 10.1134/S1063785008110072
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Lundina, E. Yu.;
- Sakharov, A. V.;
- Troshkov, S. I.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Room-Temperature Photoluminescence at 1.55μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates.
Published in:
Technical Physics Letters, 2002, v. 28, n. 11, p. 964, doi. 10.1134/1.1526898
By:
- Odnoblyudov, V. A.;
- Egorov, A. Yu.;
- Kryzhanovskaya, N. V.;
- Gladyshev, A. G.;
- Mamutin, V. V.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.
Publication type:
Article
1.55–1.6μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots.
Published in:
Technical Physics Letters, 2001, v. 27, n. 9, p. 734, doi. 10.1134/1.1405243
By:
- Zhukov, A. E.;
- Volovik, B. V.;
- Mikhrin, S. S.;
- Maleev, N. A.;
- Tsatsul’nikov, A. F.;
- Nikitina, E. V.;
- Kayander, I. N.;
- Ustinov, V. M.;
- Ledentsov, N. N.
Publication type:
Article
Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3μm.
Published in:
Technical Physics Letters, 2000, v. 26, n. 5, p. 423, doi. 10.1134/1.1262866
By:
- Tsyrlin, G. É.;
- Polyakov, N. K.;
- Egorov, V. A.;
- Petrov, V. N.;
- Volovik, B. V.;
- Sizov, D. S.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.
Publication type:
Article
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures.
Published in:
Technical Physics Letters, 1999, v. 25, n. 6, p. 462, doi. 10.1134/1.1262517
By:
- Sakharov, A. V.;
- Lundin, V. V.;
- Semenov, V. A.;
- Usikov, A. S.;
- Ledentsov, N. N.;
- Tsatsul’nikov, A. F.;
- Baıdakova, M. V.
Publication type:
Article
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.
Published in:
Technical Physics Letters, 1998, v. 24, n. 12, p. 942, doi. 10.1134/1.1262326
By:
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Mamutin, V. V.;
- Ivanov, S. V.;
- Zhmerik, V. N.;
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Kop’ev, P. S.
Publication type:
Article
Lasing in submonolayer InAs/AlGaAs structures without external optical confinement.
Published in:
Technical Physics Letters, 1998, v. 24, n. 7, p. 567, doi. 10.1134/1.1262198
By:
- Volovik, B. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Kozin, I. É.;
- Belousov, M. V.;
- Bimberg, D.
Publication type:
Article
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm.
Published in:
Technical Physics Letters, 1998, v. 24, n. 1, p. 22, doi. 10.1134/1.1261977
By:
- Ustinov, V. M.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Ledentsov, N. N.;
- Lunev, A. V.;
- Shernyakov, Yu. M.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Long-Term Stability of Long-Wavelength (>1.25 μm) Quantum-Dot Lasers Fabricated on GaAs Substrates.
Published in:
Technical Physics, 2003, v. 48, n. 1, p. 131, doi. 10.1134/1.1538744
By:
- Lundina, E. Yu.;
- Shernyakov, Yu. M.;
- Maksimov, M. V.;
- Kayander, I. N.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Zhukov, A. E.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Formation of composite InGaN/GaN/InAlN quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1338, doi. 10.1134/S1063782610100167
By:
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Kryzhanovskaya, N. V.;
- Lundin, W. V.;
- Saharov, A. V.;
- Usov, S. O.;
- Brunkov, P. N.;
- Goncharov, V. V.;
- Cherkashin, N. A.;
- Hytch, M.
Publication type:
Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
By:
- Usov, S. O.;
- Zavarin, E. E.;
- Tsatsul’nikov, A. F.;
- Lundin, V. V.;
- Sakharov, A. V.;
- Nikolaev, A. E.;
- Sinitsyn, M. A.;
- Kryzhanovskaya, N. V.;
- Troshkov, S. I.;
- Ledentsov, N. N.
Publication type:
Article
Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 828, doi. 10.1134/S1063782610060242
By:
- Kryzhanovskaya, N. V.;
- Lundin, W. V.;
- Nikolaev, A. E.;
- Tsatsul'nikov, A. F.;
- Sakharov, A. V.;
- Pavlov, M. M.;
- Cherkachin, N. A.;
- Hÿtch, M. J.;
- Valkovsky, G. A.;
- Yagovkina, M. A.;
- Usov, S. O.
Publication type:
Article
Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 807, doi. 10.1134/S1063782609060220
By:
- Sizov, V. S.;
- Gutkin, A. A.;
- Sakharov, A. V.;
- Lundin, V. V.;
- Brunkov, P. N.;
- Tsatsul'nikov, A. F.
Publication type:
Article
InGaN nanoinclusions in an AlGaN matrix.
Published in:
Semiconductors, 2008, v. 42, n. 7, p. 788, doi. 10.1134/S1063782608070075
By:
- Sizov, V. S.;
- Tsatsul'nikov, A. F.;
- Lundin, V. V.
Publication type:
Article
Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 575, doi. 10.1134/S1063782607050193
By:
- Sizov, D. S.;
- Zavarin, E. E.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Musikhin, Yu. G.;
- Sizov, V. S.;
- Suris, R. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
The study of lateral carrier transport in structures with InGaN quantum dots in the active region.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 574, doi. 10.1134/S1063782606050113
By:
- Sizov, V. S.;
- Sizov, D. S.;
- Mikhailovskiĭ, G. A.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1304, doi. 10.1134/1.2128455
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Ledentsov, N. N.
Publication type:
Article
The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55μm.
Published in:
Semiconductors, 2005, v. 39, n. 6, p. 703, doi. 10.1134/1.1944862
By:
- Kryzhanovskaya, N. V.;
- Egorov, A. Yu.;
- Mamutin, V. V.;
- Polyakov, N. K.;
- Tsatsul’nikov, A. F.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Ustinov, V. M.;
- Bimberg, D.
Publication type:
Article
A Study of Carrier Statistics in InGaN/GaN LED Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 467, doi. 10.1134/1.1900264
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.
Published in:
Semiconductors, 2005, v. 39, n. 2, p. 249, doi. 10.1134/1.1864208
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 100, doi. 10.1134/1.1852655
By:
- Soshnikov, I. P.;
- Ledentsov, N. N.;
- Tsatsul'nikov, A. F.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. A.;
- Fomin, A. V.;
- Litvinov, D.;
- Hahn, E.;
- Gerthsen, D.
Publication type:
Article
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
By:
- Lundin, V. V.;
- Zavarin, E. E.;
- Besulkin, A. I.;
- Gladyshev, A. G.;
- Sakharov, A. V.;
- Kokorev, M. F.;
- Shmidt, N. M.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Kakanakov, R.
Publication type:
Article
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1326, doi. 10.1134/1.1626218
By:
- Kryzhanovskayal, N. V.;
- Gladyshev, A. G.;
- Kovsh, A. R.;
- Soshnikov, I. P.;
- Tsatsul'nikov, A. F.;
- Kirmse, H.;
- Neumann, W.;
- Chi, J. Y.;
- Wang, J. S.;
- Wei, L.;
- Ledentsov, N. N.;
- Ustinov, V. M.
Publication type:
Article
Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 855, doi. 10.1134/1.1592864
By:
- Dubrovskiı, V. G.;
- Egorov, V. A.;
- Cirlin, G. E.;
- Polyakov, N. K.;
- Samsonenko, Yu. B.;
- Kryzhanovskaya, N. V.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.
Publication type:
Article
Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 559, doi. 10.1134/1.1575361
By:
- Sizov, D. S.;
- Samsonenko, Yu. B.;
- Tsyrlin, G. E.;
- Polyakov, N. K.;
- Egorov, V. A.;
- Tonkikh, A. A.;
- Zhukov, A. E.;
- Mikhrin, S. S.;
- Vasil’ev, A. P.;
- Musikhin, Yu. G.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.;
- Ledentsov, N. N.
Publication type:
Article
Optical Properties of Structures with Ultradense Arrays of Ge QDs in an Si Matrix.
Published in:
Semiconductors, 2003, v. 37, n. 2, p. 210, doi. 10.1134/1.1548667
By:
- Makarov, A. G.;
- Ledentsov, N. N.;
- Tsatsul’nikov, A. F.;
- Cirlin, G. E.;
- Egorov, V. A.;
- Ustinov, V. M.;
- Zakharov, N. D.;
- Werner, P.
Publication type:
Article
High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
By:
- Mikhrin, S. S.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Maleev, N. A.;
- Vasil’ev, A. P.;
- Semenova, E. S.;
- Ustinov, V. M.;
- Kulagina, M. M.;
- Nikitina, E. V.;
- Soshnikov, I. P.;
- Shernyakov, Yu. M.;
- Livshits, D. A.;
- Kryjanovskaya, N. V.;
- Sizov, D. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 997, doi. 10.1134/1.1507281
By:
- Volovik, B. V.;
- Kryzhanovskaya, N. V.;
- Sizov, D. S.;
- Kovsh, A. R.;
- Tsatsul’nikov, A. F.;
- Chi, J. Y.;
- Wang, J. S.;
- Wei, L.;
- Ustinov, V. M.
Publication type:
Article
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1020, doi. 10.1134/1.1507285
By:
- Sizov, D. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Cherkashin, N. A.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. B.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Vasil’ev, A. P.;
- Selin, R.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
1.3μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 854, doi. 10.1134/1.1385724
By:
- Sakharov, A. V.;
- Krestnikov, I. L.;
- Maleev, N. A.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Lott, J. A.;
- Alferov, Zh. I.
Publication type:
Article
The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4μm.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1316, doi. 10.1134/1.1325430
By:
- Volovik, B. V.;
- Sizov, D. S.;
- Tsatsul’nikov, A. F.;
- Musikhin, Yu. G.;
- Ledentsov, N. N.;
- Ustinov, V. M.;
- Egorov, V. A.;
- Petrov, V. N.;
- Polyakov, N. K.;
- Tsyrlin, G. É.
Publication type:
Article
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
By:
- Maleev, N. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Krestnikov, I. L.;
- Kayander, I. N.;
- Odnoblyudov, V. A.;
- Suvorova, A. A.;
- Tsatsul’nikov, A. F.;
- Shernyakov, Yu. M.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 481, doi. 10.1134/1.1188011
By:
- Krestnikov, I. L.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Musikhin, Yu. G.;
- Kartashova, A. P.;
- Usikov, A. S.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Soshnikov, I. P.;
- Hahn, E.;
- Neubauer, B.;
- Rosenauer, A.;
- Litvinov, D.;
- Gerthsen, D.;
- Plaut, A. C.;
- Hoffmann, A. A.;
- Bimberg, D.
Publication type:
Article
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
Published in:
Semiconductors, 2000, v. 34, n. 3, p. 323, doi. 10.1134/1.1187980
By:
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Bedarev, D. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Maleev, N. A.;
- Musikhin, Yu. G.;
- Ustinov, V. M.;
- Bert, N. A.;
- Kop’ev, P. S.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954
By:
- Mikhrin, S. S.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Shernyakov, Yu. M.;
- Kayander, I. N.;
- Kondrat’eva, E. Yu.;
- Livshits, D. A.;
- Tarasov, I. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
Gain characteristics of quantum-dot injection lasers.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Ledentsov, N. N.;
- Tsatsul’nikov, A. F.;
- Maksimov, M. V.;
- Zaıtsev, S. V.;
- Shernyakov, Yu. M.;
- Lunev, A. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Heteroepitaxial growth of InAs on Si: a new type of quantum dot.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
By:
- Cyrlin, G. E.;
- Petrov, V. N.;
- Dubrovskii, V. G.;
- Samsonenko, Yu. B.;
- Polyakov, N. K.;
- Golubok, A. O.;
- Masalov, S. A.;
- Komyak, N. I.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Maximov, M. V.;
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Zhukov, A. E.;
- Kop’ev, P. S.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805
By:
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Ivanov, S. V.;
- Maksimov, M. V.;
- Musikhin, Yu. G.;
- Ledentsov, N. N.;
- Mel’tser, B. Ya.;
- Solov’ev, V. A.;
- Kop’ev, P. S.;
- Chernyshov, A. Yu.;
- Belousov, M. V.
Publication type:
Article
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627
By:
- Volovik, B. V.;
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Maleev, N. A.;
- Musikhin, Yu. G.;
- Suvorova, A. A.;
- Ustinov, V. M.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.;
- Werner, P.
Publication type:
Article
Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
By:
- Kovsh, A. R.;
- Zhukov, A. E.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Tsatsul’nikov, A. F.;
- Maksimov, M. V.;
- Volovik, B. V.;
- Bedarev, D. A.;
- Shernyakov, Yu. M.;
- Kondrat’eva, E. Yu.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Investigation of MOVPE-grown GaN layers doped with As atoms.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770
By:
- Tsatsul’nikov, A. F.;
- Ber, B. Ya.;
- Kartashova, A. P.;
- Kudryavtsev, Yu. A.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Usikov, A. S.;
- Alfërov, Zh. I.;
- Hoffmann, A.
Publication type:
Article
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host.
Published in:
Semiconductors, 1999, v. 33, n. 4, p. 467, doi. 10.1134/1.1187713
By:
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Zhukov, A. E.;
- Kop’ev, P. S.;
- Alfërov, Zh. I.;
- Kozin, I. É.;
- Belousov, M. V.;
- Bimberg, D.
Publication type:
Article
Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 153, doi. 10.1134/1.1187662
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Egorov, A. Yu.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Volovik, B. V.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Shernyakov, Yu. M.;
- Lunev, A. V.;
- Musikhin, Yu. G.;
- Bert, N. A.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 165, doi. 10.1134/1.1187664
By:
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Gain in injection lasers based on self-organized quantum dots.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 184, doi. 10.1134/1.1187668
By:
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Kop’ev, P. S.
Publication type:
Article
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix.
Published in:
Semiconductors, 1999, v. 33, n. 1, p. 80, doi. 10.1134/1.1187651
By:
- Zhen, Zhao;
- Bedarev, D. A.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Lunev, A. V.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Kop’ev, P. S.
Publication type:
Article
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots.
Published in:
Semiconductors, 1998, v. 32, n. 10, p. 1096, doi. 10.1134/1.1187575
By:
- Brunkov, P. N.;
- Suvorova, A. A.;
- Bert, N. A.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Ustinov, V. M.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Konnikov, S. G.;
- Eaves, L.;
- Main, P. S.
Publication type:
Article
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
Published in:
Semiconductors, 1998, v. 32, n. 9, p. 997, doi. 10.1134/1.1187532
By:
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Ustinov, V. M.;
- Shernyakov, Yu. M.;
- Maksimov, M. V.;
- Tsatsul'nikov, A. F.;
- Volovik, B. V.;
- Lunev, A. V.;
- Ledentsov, N. N.;
- Kop'ev, P.S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 um
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 795, doi. 10.1134/1.1187509
By:
- Zhukov, A. E.;
- Egoroy, A. Yu.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Zaitsev, S. V.;
- Gordeev, N. Yu.;
- Kopchatov, V. I.;
- Lunev, A. V.;
- Tsatsul'nikov, A. F.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Kop'ev, P.S.
Publication type:
Article

Found: 68