We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K.
- Authors
Khabibullin, R. A.; Maremyanin, K. V.; Ponomarev, D. S.; Galiev, R. R.; Zaycev, A. A.; Danilov, A. I.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Afonenko, A. A.; Ushakov, D. V.; Morozov, S. V.; Gavrilenko, V. I.
- Abstract
The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz is optimized. A heterostructure based on the developed design with an active region thickness of 10 μm is grown by molecular-beam epitaxy with a deviation of the active-module thickness from the nominal of less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated emission on the current, and the lasing spectra show good agreement with the calculated characteristics.
- Subjects
QUANTUM cascade lasers; QUANTUM wells; AUDITING standards; GALLIUM arsenide
- Publication
Semiconductors, 2022, Vol 56, Issue 2, p71
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782622010080