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- Title
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.
- Authors
Malin, T. V.; Milakhin, D. S.; Mansurov, V. G.; Galitsyn, Yu. G.; Kozhuhov, A. S.; Ratnikov, V. V.; Smirnov, A. N.; Davydov, V. Yu.; Zhuravlev, K. S.
- Abstract
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.
- Subjects
NUCLEATION; EPITAXY; CRYSTAL growth; ALUMINUM nitride; RAMAN spectroscopy
- Publication
Semiconductors, 2018, Vol 52, Issue 6, p789
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618060143