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- Title
Investigation of dual ion beam sputtered transparent conductive Ga-doped ZnO films.
- Authors
Pandey, Saurabh Kumar; Pandey, Sushil Kumar; Verma, Shruti; Gupta, M.; Sathe, V.; Mukherjee, Shaibal
- Abstract
Ga-doped ZnO (GZO) transparent conducting films were deposited on sapphire (0001) substrates using dual ion beam sputtering deposition system. The impact of growth temperature on the structural, morphological, elemental, optical, and electrical properties was thoroughly investigated and reported. X-ray diffraction measurements explicitly confirmed that all GZO films had (002) preferred crystal orientation. The film deposited at 400 °C exhibited the narrowest full-width at half-maximum value of 0.24° for (002) crystalline plane and the lowest room temperature electrical resistivity of 4.11 × 10 −3 Ω cm. The Raman spectra demonstrated the vibrational modes at 576 and 650–670 cm −1, associated with native oxygen vacancies and elemental Ga doping in ZnO lattice, respectively. All doped films showed an overall transmittance of above 95 % in the visible spectra. A correlation between structural, optical, elemental, and electrical properties with GZO growth temperature was established.
- Subjects
ZINC oxide films; GALLIUM; ION beams; SPUTTERING (Physics); DOPING agents (Chemistry); CRYSTAL morphology
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 12, p4919
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1498-2