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Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage.
- Published in:
- Advanced Functional Materials, 2011, v. 21, n. 22, p. 4305, doi. 10.1002/adfm.201101073
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- Publication type:
- Article
Neuromorphic devices based on fluorite‐structured ferroelectrics.
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- InfoMat, 2022, v. 4, n. 12, p. 1, doi. 10.1002/inf2.12380
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- Publication type:
- Article
Front Cover Image.
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- InfoMat, 2022, v. 4, n. 12, p. 1, doi. 10.1002/inf2.12389
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- Article
Insights into Texture and Phase Coexistence in Polycrystalline and Polyphasic Ferroelectric HfO<sub>2</sub> Thin Films using 4D-STEM.
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- Microscopy & Microanalysis, 2019, p. 184, doi. 10.1017/S1431927618001411
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- Publication type:
- Article
Insights into Texture and Phase Coexistence in Polycrystalline and Polyphasic Ferroelectric HfO<sub>2</sub> Thin Films using 4D-STEM.
- Published in:
- 2018
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- Publication type:
- Abstract
Top Electrode Engineering for High‐Performance Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors (Adv. Mater. Technol. 16/2023).
- Published in:
- Advanced Materials Technologies, 2023, v. 8, n. 16, p. 1, doi. 10.1002/admt.202370074
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- Publication type:
- Article
Top Electrode Engineering for High‐Performance Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors.
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- Advanced Materials Technologies, 2023, v. 8, n. 16, p. 1, doi. 10.1002/admt.202300146
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- Publication type:
- Article
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022)
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
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- Publication type:
- Article
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
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- Publication type:
- Article
Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al<sub>0.7</sub>Sc<sub>0.3</sub>N Film with Thickness down to 20 nm.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200726
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- Publication type:
- Article
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
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- Publication type:
- Article
Enhanced Ferroelectric Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films Using a HfO<sub>0.61</sub>N<sub>0.72</sub> Interfacial Layer.
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- Advanced Electronic Materials, 2022, v. 8, n. 6, p. 1, doi. 10.1002/aelm.202100042
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- Publication type:
- Article
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO<sub>2</sub>-based ferroelectric thin film.
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- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28236-5
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- Publication type:
- Article
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors.
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- Scientific Reports, 2016, p. 20825, doi. 10.1038/srep20825
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- Publication type:
- Article
Frustration of Negative Capacitance in Al<sub>2</sub>O<sub>3</sub>/BaTiO<sub>3</sub> Bilayer Structure.
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- Scientific Reports, 2016, p. 19039, doi. 10.1038/srep19039
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- Publication type:
- Article
Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.
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- Scientific Reports, 2015, p. 1, doi. 10.1038/srep14618
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- Publication type:
- Article
Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications.
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- Advanced Functional Materials, 2023, v. 33, n. 42, p. 1, doi. 10.1002/adfm.202303956
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- Publication type:
- Article
Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al<sub>2</sub>O<sub>3</sub>/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> Bilayer Thin Film.
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201808228
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- Publication type:
- Article
Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes.
- Published in:
- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 10, p. 1, doi. 10.1007/s00339-021-04945-4
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- Publication type:
- Article
Thin Hf<sub> x</sub>Zr<sub>1- x</sub>O<sub>2</sub> Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability.
- Published in:
- Advanced Energy Materials, 2014, v. 4, n. 16, p. n/a, doi. 10.1002/aenm.201400610
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- Publication type:
- Article
(Hf,Zr)O<sub>2</sub>‐based Ferroelectrics: From Fundamentals to Applications.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202200324
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- Publication type:
- Article
Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O<sub>2</sub> to AlN and Related Materials.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100201
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- Publication type:
- Article
Broad Phase Transition of Fluorite‐Structured Ferroelectrics for Large Electrocaloric Effect.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 9, p. N.PAG, doi. 10.1002/pssr.201900177
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- Publication type:
- Article
Effect of the annealing temperature of thin Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> films on their energy storage behavior.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 10, p. 857, doi. 10.1002/pssr.201409349
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- Publication type:
- Article
Ferroelectric properties and switching endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films on TiN bottom and TiN or RuO<sub>2</sub> top electrodes.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 6, p. 532, doi. 10.1002/pssr.201409017
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- Publication type:
- Article
Atomic Layer Deposition of Epitaxial Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Functional Materials, 2024, v. 34, n. 24, p. 1, doi. 10.1002/adfm.202314396
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- Publication type:
- Article
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00403-4
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- Article
An integrated database for marine environment monitoring and management system at the Tongyoung bay in Korea.
- Published in:
- 2018
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- Publication type:
- Conference Paper/Materials
Calculation of Regional QC ranges of temperature and salinity for Korean waters.
- Published in:
- Bollettino di Geofisica Teorica ed Applicata, 2016, v. 57, p. 55
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- Publication type:
- Article
Completion of the 2nd Phase Development of the KOOS Data Management System.
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- Geophysical Research Abstracts, 2018, v. 20, p. 2173
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- Publication type:
- Article
Giant Negative Electrocaloric Effects of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Materials, 2016, v. 28, n. 36, p. 7956, doi. 10.1002/adma.201602787
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- Publication type:
- Article
Ferroelectricity and Antiferroelectricity of Doped Thin HfO<sub>2</sub>-Based Films.
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- Advanced Materials, 2015, v. 27, n. 11, p. 1811, doi. 10.1002/adma.201404531
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- Publication type:
- Article
Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution.
- Published in:
- Advanced Materials Interfaces, 2022, v. 9, n. 7, p. 1, doi. 10.1002/admi.202101647
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- Publication type:
- Article
Origin of Ferroelectric Phase in Undoped HfO<sub>2</sub> Films Deposited by Sputtering.
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- Advanced Materials Interfaces, 2019, v. 6, n. 20, p. N.PAG, doi. 10.1002/admi.201901528
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- Publication type:
- Article
Origin of Ferroelectric Phase in Undoped HfO<sub>2</sub> Films Deposited by Sputtering.
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- Advanced Materials Interfaces, 2019, v. 6, n. 11, p. N.PAG, doi. 10.1002/admi.201900042
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- Publication type:
- Article
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.
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- Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03301-4
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- Publication type:
- Article
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023).
- Published in:
- Advanced Materials, 2023, v. 35, n. 43, p. 1, doi. 10.1002/adma.202370312
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- Publication type:
- Article
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics.
- Published in:
- Advanced Materials, 2023, v. 35, n. 43, p. 1, doi. 10.1002/adma.202204904
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- Publication type:
- Article
From Ferroelectric Material Optimization to Neuromorphic Devices.
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- Advanced Materials, 2023, v. 35, n. 37, p. 1, doi. 10.1002/adma.202206042
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- Publication type:
- Article
Field‐Induced Ferroelectric Hf<sub>1‐</sub><sub>x</sub>Zr<sub>x</sub>O<sub>2</sub> Thin Films for High‐k Dynamic Random Access Memory.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631
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- Publication type:
- Article
On the Origin of the Large Remanent Polarization in La:HfO<sub>2</sub>.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900303
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- Publication type:
- Article
Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides.
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- Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800522
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- Publication type:
- Article
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800436
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- Publication type:
- Article
Effect of Annealing Ferroelectric HfO<sub>2</sub> Thin Films: In Situ, High Temperature X‐Ray Diffraction.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800091
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- Publication type:
- Article
Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO<sub>2</sub>.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700489
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- Publication type:
- Article
Si Doped Hafnium Oxide-A 'Fragile' Ferroelectric System.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 10, p. n/a, doi. 10.1002/aelm.201700131
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- Publication type:
- Article
Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600505
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- Publication type:
- Article