We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
3D HfO<sub>2</sub> Thin Film MEMS Capacitor with Superior Energy Storage Properties.
- Authors
Zhang, Yijun; Zhao, Huifeng; Yan, Tianyi; Ren, Wei; Niu, Gang; Jiang, Zhuangde; Liu, Zenghui; Wu, Heping; Wang, Zhe; Ye, Zuo-Guang
- Abstract
Capacitors are ubiquitous and crucial components in modern technologies. Future microelectronic devices require novel dielectric capacitors with higher energy storage density, higher efficiency, better frequency and temperature stabilities, and compatibility with integrated circuit (IC) processes. Here, in order to overcome these challenges, a novel 3D HfO2 thin film capacitor is designed and fabricated by an integrated microelectromechanical system (MEMS) process. The energy storage density (ESD) of the capacitor reaches 28.94 J cm-3, and the energy storage efficiency of the capacitor is up to 91.3% under an applied electric field of 3.5 MV cm-1. The ESD can be further improved by reducing the minimum period structure size of the 3D capacitor. Moreover, the 3D capacitor exhibits excellent temperature stability (up to 150 °C) and charge-discharge endurance (107 cycles). The results indicate that the 3D HfO2 thin film MEMS capacitor has enormous potential in energy storage applications in harsh environments, such as pulsed discharge and power conditioning electronics.
- Subjects
ENERGY storage; THIN films; CAPACITORS; ENERGY density; MICROELECTROMECHANICAL systems; PIEZOELECTRIC thin films; SUPERCAPACITORS
- Publication
Advanced Functional Materials, 2023, Vol 33, Issue 48, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202305733