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- Title
Anomalous Hall Effect in Ge<sub>1-x-y</sub>Pb<sub>x</sub>Mn<sub>y</sub>Te Composite System.
- Authors
Podgórni, A.; Kilanski, L.; Dobrowolski, W.; Górska, M.; Domukhovski, V.; Brodowska, B.; Reszka, A.; Kowalski, B. J.; Slynko, V. E.; Slynko, E. I.
- Abstract
The purpose of this study was to investigate the magnetotransport properties of the Ge0.743Pb0.183Mn0.074Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature TSG = 97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p = 6.6×1020 cm-3, temperature-independent. Magnetoresistance amplitude changes from 0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coeffcient, RS = 2.0 × 106 m3/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in Ge0.743Pb0.183Mn0.074Te alloy.
- Subjects
ANOMALOUS Hall effect; HALL effect devices; GALVANOMAGNETIC effects; GYRATORS; HALL effect
- Publication
Acta Physica Polonica: A, 2014, Vol 126, Issue 5, p1180
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.126.1180