We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Enhancement of Electron Mobility and Photoconductivity in Quantum Well In<sub>0:52</sub>Al<sub>0:48</sub>As/In<sub>0:53</sub>Ga<sub>0:47</sub>As/In<sub>0:52</sub>A10:48As on InP Substrate.
- Authors
KULBACHINSKII, V. A.; LUNIN, R. A.; YUZEEVA, N. A.; GALIEV, G. B.; VASILIEVSKII, I. S.; KLIMOV, E. A.
- Abstract
Isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well In0.53Ga0:47As or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.
- Subjects
QUANTUM well devices; MOLECULAR beam epitaxy; ELECTRON transport; PHOTOCONDUCTIVITY; SUPERCONDUCTIVITY; DARK conductivity; SHUBNIKOV-de Haas effect
- Publication
Acta Physica Polonica: A, 2013, Vol 123, Issue 2, p345
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.123.345