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- Title
Origin of Ferroelectric Phase in Undoped HfO<sub>2</sub> Films Deposited by Sputtering.
- Authors
Mittmann, Terence; Materano, Monica; Lomenzo, Patrick D.; Park, Min Hyuk; Stolichnov, Igor; Cavalieri, Matteo; Zhou, Chuanzhen; Chung, Ching‐Chang; Jones, Jacob L.; Szyjka, Thomas; Müller, Martina; Kersch, Alfred; Mikolajick, Thomas; Schroeder, Uwe
- Abstract
GLO:JZVP/23oct19:admi201901528-fig-0001.jpg PHOTO (COLOR): Number of cycles to break down HfO2 films as a function of film thickness and annealing temperature. GLO:JZVP/23oct19:admi201901528-fig-0002.jpg PHOTO (COLOR): Thickness dependence of the double remanent polarization 2Pr of ALD and PVD HfO2-based metal-insulator-metal (MIM) capacitors.[17] The broken lines are guides to the eyes. gl.
- Subjects
FERROELECTRIC thin films; MAGNETRON sputtering; CAPACITORS
- Publication
Advanced Materials Interfaces, 2019, Vol 6, Issue 20, pN.PAG
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201901528