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- Title
Comparison of composition ultra-thin silicon oxynitride layers' fabricated by PECVD and ultrashallow rf plasma ion implantation.
- Authors
Mroczyński, Robert; Bieniek, Tomasz; Beck, Romuald B.; Ćwil, Michał; Konarski, Piotr; Hoffmann, Patrick; Schmeißer, Dieter
- Abstract
In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.
- Subjects
PLASMA-enhanced chemical vapor deposition; ION implantation; X-ray photoelectron spectroscopy; SECONDARY ion mass spectrometry; ELLIPSOMETRY
- Publication
Journal of Telecommunications & Information Technology, 2007, Vol 2007, Issue 3, p20
- ISSN
1509-4553
- Publication type
Article
- DOI
10.26636/jtit.2007.3.822