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- Title
Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth.
- Authors
Voronenkov, Vladislav; Bochkareva, Natalia; Zubrilov, Andrey; Lelikov, Yuri; Gorbunov, Ruslan; Latyshev, Philipp; Shreter, Yuri
- Abstract
An hydride vapor‐phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High‐capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load‐lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.
- Subjects
STAGNATION flow; STAGNATION point; HYDRIDES; REFRACTORY materials; VACUUM chambers
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2020, Vol 217, Issue 3, pN.PAG
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201900629