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- Title
High-current Al Ga N/ Ga N high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy.
- Authors
Pang, Liang; Krein, Philip; Kim, Ki‐Won; Lee, Jung‐Hee; Kim, Kyekyoon (Kevin)
- Abstract
We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high current operation achieved by selective area growth (SAG) technique based on plasma-assisted molecular beam epitaxy (PAMBE). Significant improvement in DC characteristics of the multiple-gate-finger HEMTs was demonstrated when SAG was employed. Furthermore, when group of HEMTs were interconnected, the resulted large-periphery device, with the total gate width of 5.2 mm, exhibited a maximum current of 1.75 A and an on-state resistance of 4.76 mΩ cm2, showing the efficacy of PAMBE-SAG to fabricate GaN-based HEMTs for high-power applications.
- Subjects
MODULATION-doped field-effect transistors; MOLECULAR beam epitaxy; SELECTIVE area epitaxy; THERMAL conductivity; DOPING agents (Chemistry); METAL organic chemical vapor deposition
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2014, Vol 211, Issue 1, p180
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201330157