Found: 6
Select item for more details and to access through your institution.
Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates.
- Published in:
- Advanced Materials Technologies, 2023, v. 8, n. 18, p. 1, doi. 10.1002/admt.202300600
- By:
- Publication type:
- Article
Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template.
- Published in:
- Advanced Materials Technologies, 2023, v. 8, n. 15, p. 1, doi. 10.1002/admt.202300147
- By:
- Publication type:
- Article
A study of BGaN back-barriers for AlGaN/GaN HEMTs.
- Published in:
- European Physical Journal - Applied Physics, 2012, v. 60, n. 3, p. N.PAG, doi. 10.1051/epjap/2012120265
- By:
- Publication type:
- Article
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-77681-z
- By:
- Publication type:
- Article
BAlN thin layers for deep UV applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 745, doi. 10.1002/pssa.201400199
- By:
- Publication type:
- Article
Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers.
- Published in:
- Optical & Quantum Electronics, 2013, v. 45, n. 7, p. 681, doi. 10.1007/s11082-013-9665-5
- By:
- Publication type:
- Article