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- Title
Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe.
- Authors
Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi
- Abstract
A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as V, Cd, and Te, as well as defect complexes, namely Te-V (B complex), $$ {\hbox{Te}}_{\rm{Cd}}^{2 + } $$ - $$ {\hbox{V}}_{\rm{Cd}}^{2 - } $$ (D complex), $$ {\hbox{In}}_{\rm{Cd}}^{ + } $$ - $$ {\hbox{V}}_{\rm{Cd}}^{ - } $$ (A-center) and Te-V (Te), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a $$ {\hbox{V}}_{\rm{Cd}}^{2 - } $$ , Te, and B/D-complex in undoped crystal. The concentration of V drops down in an obvious manner and that of Te rises for doped crystal with increasing [In].
- Subjects
CADMIUM telluride; THERMODYNAMIC equilibrium; POINT defects; ANNEALING of crystals; CHEMICAL equations
- Publication
Journal of Electronic Materials, 2016, Vol 45, Issue 10, p4747
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-016-4711-2