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Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3.
Published in:
Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1568, doi. 10.1007/s11664-018-06885-x
By:
- Fares, Chaker;
- Ren, F.;
- Lambers, Eric;
- Hays, David C.;
- Gila, B. P.;
- Pearton, S. J.
Publication type:
Article
Growth and Characterization of GaN Nanowires for Hydrogen Sensors.
Published in:
Journal of Electronic Materials, 2009, v. 38, n. 4, p. 490, doi. 10.1007/s11664-008-0596-z
By:
- Johnson, Jason L.;
- Yongho Choi;
- Ural, Ant;
- Lim, Wantae;
- Wright, J. S.;
- Gila, B. P.;
- Ren, F.;
- Pearton, S. J.
Publication type:
Article
ZnO and Related Materials for Sensors and Light-Emitting Diodes.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1426, doi. 10.1007/s11664-008-0416-5
By:
- PEARTON, S. J.;
- LIM, W. T.;
- WRIGHT, J. S.;
- TIEN, L. C.;
- KIM, H. S.;
- NORTON, D. P.;
- WANG, H. T.;
- KANG, B. S.;
- REN, F.;
- JUN, J.;
- LIN, J.;
- OSINSKY, A.
Publication type:
Article
Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 5, p. 550, doi. 10.1007/s11664-007-0298-y
By:
- Kang, B. S.;
- Wang, H. T.;
- Ren, F.;
- Hlad, M.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Li, C.;
- Low, Z. N.;
- Lin, J.;
- Johnson, J. W.;
- Rajagopal, P.;
- Roberts, J. C.;
- Piner, E. L.;
- Linthicum, K. J.
Publication type:
Article
Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 4, p. 384, doi. 10.1007/s11664-007-0326-y
By:
- Anderson, T. J.;
- Ren, F.;
- Kim, J.;
- Lin, J.;
- Hlad, M.;
- Gila, B. P.;
- Voss, L.;
- Pearton, S. J.;
- Bove, P.;
- Lahreche, H.;
- Thuret, J.
Publication type:
Article
Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 2, p. 161, doi. 10.1007/s11664-007-0334-y
By:
- Lim, W. T.;
- Sadik, P. W.;
- Norton, D. P.;
- Gila, B. P.;
- Pearton, S. J.;
- Kravchenko, I. I.;
- Ren, F.
Publication type:
Article
Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 10, p. 1320, doi. 10.1007/s11664-007-0203-8
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Markov, A. V.;
- Yakimov, E. B.;
- Vergeles, P. S.;
- Kolin, N. G.;
- Merkurisov, D. I.;
- Boiko, V. M.;
- In-Hwan Lee;
- Cheul-Ro Lee;
- S. J. Pearton
Publication type:
Article
Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3
By:
- Voss, L. F.;
- Stafford, L.;
- Khanna, R.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Ren, F.;
- Kravchenko, I. I.
Publication type:
Article
Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 368, doi. 10.1007/s11664-006-0037-9
By:
- Chen, J.-J.;
- Hlad, M.;
- Gerger, A. P.;
- Gila, B. P.;
- Ren, F.;
- Abernathy, C. R.;
- Pearton, S. J.
Publication type:
Article
Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 519, doi. 10.1007/s11664-006-0035-y
By:
- Allums, K. K.;
- Hlad, M.;
- Gerger, A. P.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Ren, F.;
- Dwivedi, R.;
- Fogarty, T. N.;
- Wilkins, R.
Publication type:
Article
Annealing and Measurement Temperature Dependence of W2B- and W2B2-Based Rectifying Contacts to p-GaN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 384, doi. 10.1007/s11664-006-0054-8
By:
- Voss, L. F.;
- Stafford, L.;
- Thaler, G. T.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Chen, J.-J.;
- Ren, F.
Publication type:
Article
Ferromagnetism in Transition-Metal Doped ZnO.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 462, doi. 10.1007/s11664-006-0034-z
By:
- Pearton, S. J.;
- Norton, D. P.;
- Ivill, M. P.;
- Hebard, A. F.;
- Zavada, J. M.;
- Chen, W. M.;
- Buyanova, I. A.
Publication type:
Article
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 391, doi. 10.1007/s11664-006-0040-1
By:
- Hite, J. K.;
- Frazier, R. M.;
- Davies, R. P.;
- Thaler, G. T.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Zavada, J. M.;
- Brown, E.;
- Hömmerich, U.
Publication type:
Article
Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 488, doi. 10.1007/s11664-006-0039-7
By:
- Wright, J. S.;
- Stafford, L.;
- Gila, B. P.;
- Norton, D. P.;
- Pearton, S. J.;
- Hung-Ta Wang;
- Ren, F.
Publication type:
Article
Improved Long-Term Thermal Stability At 350°C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 379, doi. 10.1007/s11664-006-0036-x
By:
- Khanna, Rohit;
- Stafford, L.;
- Pearton, S. J.;
- Anderson, T. J.;
- Ren, F.;
- Kravchenko, I. I.;
- Dabiran, Amir;
- Osinsky, A.;
- Joon Yeob Lee;
- Kwan-Young Lee;
- Jihyun Kim
Publication type:
Article
ZnO Spintronics and Nanowire Devices.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 5, p. 862, doi. 10.1007/BF02692541
By:
- Pearton, S. J.;
- Norton, D. P.;
- Heo, Y. W.;
- Tien, L. C.;
- Ivill, M. P.;
- Li, Y.;
- Kang, B. S.;
- Ren, F.;
- Kelly, J.;
- Hebard, A. F.
Publication type:
Article
Electrical Transport Properties of Single GaN and InN Nanowires.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 738, doi. 10.1007/s11664-006-0131-z
By:
- Chih-Yang Chang;
- Gou-Chung Chi;
- Wei-Ming Wang;
- Li-Chyong Chen;
- Kuei-Hsien Chen;
- Ren, F.;
- Pearton, S. J.
Publication type:
Article
Selective Dry Etching of (Sc2O3)x(Ga2O3)1-x Gate Dielectrics and Surface Passivation Films on GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 680, doi. 10.1007/s11664-006-0120-2
By:
- Hlad, M.;
- Voss, L.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Ren, F.
Publication type:
Article
Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 685, doi. 10.1007/s11664-006-0121-1
By:
- Soohwan Jang;
- Ren, F.;
- Pearton, S. J.;
- Gila, B. P.;
- Hlad, M.;
- Abernathy, C. R.;
- Hyucksoo Yang;
- Pan, C. J.;
- Jenn-Inn Chyi;
- Bove, P.;
- Lahreche, H.;
- Thuret, J.
Publication type:
Article
Electrical Properties of Undoped Bulk ZnO Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 663, doi. 10.1007/s11664-006-0117-x
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Kozhukhova, E. A.;
- Pearton, S. J.;
- Norton, D. P.;
- Osinsky, A.;
- Dabiran, Amir
Publication type:
Article
Annealing Temperature Dependence of TiB2 Schottky Barrier Contacts on n-GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 658, doi. 10.1007/s11664-006-0116-y
By:
- Khanna, Rohit;
- Pearton, S. J.;
- Ren, F.;
- Kravchenko, I.
Publication type:
Article
Comparison of Laser-Wavelength Operation for Drilling of Via Holes in AlGaN/GaN HEMTs on SiC Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 675, doi. 10.1007/s11664-006-0119-8
By:
- Anderson, T. J.;
- Ren, F.;
- Covert, L.;
- Lin, J.;
- Pearton, S. J.;
- Dalrymple, T. W.;
- Bozada, C.;
- Fitch, R. C.;
- Moser, N.;
- Bedford, R. G.;
- Schimpf, M.
Publication type:
Article
Selective and Nonselective Wet Etching of Zn0.9Mg0.1O/ZnO.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 516, doi. 10.1007/s11664-006-0092-2
By:
- Jau-Jiun Chen;
- Soohwan Jang;
- Ren, F.;
- Yuanjie Li;
- Hyun-Sik Kim;
- Norton, D. P.;
- Pearton, S. J.;
- Osinsky, A.;
- Chu, S. N . G.;
- Weaver, J. F.
Publication type:
Article
Synthesis and Characterization of Phosphorus-Doped ZnO and (Zn,Mg)O Thin Films via Pulsed Laser Deposition.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 530, doi. 10.1007/s11664-006-0095-z
By:
- Li, Y. J.;
- Heo, Y. W.;
- Erie, J. M.;
- Kim, H.;
- Ip, K.;
- Pearton, S. J.;
- Norton, D. P.
Publication type:
Article
Properties of Phosphorus-Doped (Zn,Mg)O Thin Films and Device Structures.
Published in:
Journal of Electronic Materials, 2005, v. 34, n. 4, p. 409, doi. 10.1007/s11664-005-0120-7
By:
- Heo, Y. W.;
- Kwon, Y. W.;
- Li, Y.;
- Pearton, S. J.;
- Norton, D. P.
Publication type:
Article
Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications.
Published in:
Journal of Electronic Materials, 2005, v. 34, n. 4, p. 416, doi. 10.1007/s11664-005-0121-6
By:
- Dong, J. W.;
- Osinsky, A.;
- Hertog, B.;
- Dabiran, A. M.;
- Chow, P. P.;
- Heo, Y. W.;
- Norton, D. P.;
- Pearton, S. J.
Publication type:
Article
Design of Edge Termination for GaN Power Schottky Diodes.
Published in:
Journal of Electronic Materials, 2005, v. 34, n. 4, p. 370, doi. 10.1007/s11664-005-0113-6
By:
- Laroche, J. R.;
- Ren, F.;
- Baik, K. W.;
- Pearton, S. J.;
- Shelton, B. S.;
- Peres, B.
Publication type:
Article
Fabrication Approaches to ZnO Nanowire Devices.
Published in:
Journal of Electronic Materials, 2005, v. 34, n. 4, p. 404, doi. 10.1007/s11664-005-0119-0
By:
- LaRoche, J. R.;
- Heo, Y. W.;
- Kang, B. S.;
- Tien, L. C.;
- Kwon, Y.;
- Norton, D. P.;
- Gila, B. P.;
- Ren, F.;
- Pearton, S. J.
Publication type:
Article
AIN-Based Dilute Magnetic Semiconductors.
Published in:
Journal of Electronic Materials, 2005, v. 34, n. 4, p. 365, doi. 10.1007/s11664-005-0112-7
By:
- Frazier, R. M.;
- Thaler, G. T.;
- Gila, B. P.;
- Stapleton, J.;
- Overberg, M. E.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Ren, F.;
- Zavada, J. M.
Publication type:
Article
Proton Irradiation of ZnO Schottky Diodes.
Published in:
Journal of Electronic Materials, 2005, v. 34, n. 4, p. 395, doi. 10.1007/s11664-005-0117-2
By:
- Khanna, Rohit;
- Ip, K.;
- Allums, K. K.;
- Baik, K.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Heo, Y. W.;
- Norton, D. P.;
- Ren, F.;
- Shojah-Ardalan, S.;
- Wilkins, R.
Publication type:
Article
SiC Via Holes by Laser Drilling.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 477, doi. 10.1007/s11664-004-0206-7
By:
- Kim, S.;
- Bang, B. S.;
- Ren, F.;
- D'entremont, J.;
- Blumenfeld, W.;
- Cordock, T.;
- Pearton, S. J.
Publication type:
Article
Optical and Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 467, doi. 10.1007/s11664-004-0204-9
By:
- Buyanova, I. A.;
- Izadifard, M.;
- Storasta, L.;
- Chen, W. M.;
- Kim, Jihyun;
- Ren, F.;
- Thaler, G.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Pan, C.-C.;
- Chen, G.-T.;
- Chyi, J.-I.;
- Zavada, J. M.
Publication type:
Article
Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 426, doi. 10.1007/s11664-004-0196-5
By:
- Irokawa, Y.;
- Jihyun Kim;
- Ren, F.;
- Baik, K. H.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Pan, C.-C.;
- Chen, G.-T.;
- Chyi, J.-I.
Publication type:
Article
Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 384, doi. 10.1007/s11664-004-0188-5
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Frazier, R. M.;
- Thaler, G. T.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Zavada, J. M.;
- Wilson, R. G.
Publication type:
Article
Etching of As- and P-Based III-V Semiconductors in a Planar Inductively Coupled BCl3/Ar Plasma.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 4, p. 358, doi. 10.1007/s11664-004-0143-5
By:
- Lee, J. W.;
- Lim, W. T.;
- Baek, I. K.;
- Yoo, S. R.;
- Jeon, M. H.;
- Cho, G. S.;
- PEARTON, S. J.
Publication type:
Article
Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 3, p. 241, doi. 10.1007/s11664-004-0186-7
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Kim, Jihyun;
- Ren, F.;
- Thaler, G. T.;
- Frazier, R. M.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Buyanova, I. A.;
- Rudko, G. Y.;
- Chen, W. M.;
- C.-C. Pan, W. M.;
- G.-T. Chen, W. M.;
- J.-I. Chyi, W. M.;
- Zavada, J. M.
Publication type:
Article
Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture.
Published in:
Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 2, p. 251, doi. 10.1007/s00339-008-4426-1
By:
- Kim, H. S.;
- Erie, J.-M.;
- Pearton, S. J.;
- Norton, D. P.;
- Ren, F.
Publication type:
Article
Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer.
Published in:
Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 2, p. 255, doi. 10.1007/s00339-008-4427-0
By:
- Kim, H. S.;
- Pearton, S. J.;
- Norton, D. P.;
- Ren, F.
Publication type:
Article
Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition.
Published in:
Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 1, p. 29, doi. 10.1007/s00339-007-4378-x
By:
- Tien, L. C.;
- Pearton, S. J.;
- Norton, D. P.;
- Ren, F.
Publication type:
Article
Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods.
Published in:
Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 6, p. 1117, doi. 10.1007/s00339-005-3310-5
By:
- Wang, H. T.;
- Kang, B. S.;
- Ren, F.;
- Tien, L. C.;
- Sadik, P. W.;
- Norton, D. P.;
- Pearton, S. J.;
- Lin, J.
Publication type:
Article
Detection of CO using bulk ZnO Schottky rectifiers.
Published in:
Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 2, p. 259, doi. 10.1007/s00339-004-2666-2
By:
- Kang, B. S.;
- Kim, S.;
- Ren, F.;
- Ip, K.;
- Heo, Y. W.;
- Gila, B. P.;
- Abernathy, C. R.;
- Norton, D. P.;
- Pearton, S. J.
Publication type:
Article
Radiation Damage in GaN-Based Materials and Devices.
Published in:
Advanced Energy Materials, 2015, v. 5, n. 23, p. 345
By:
- Pearton, S. J.;
- Deist, Richard;
- Polyakov, Alexander Y.;
- Ren, Fan;
- Liu, Lu;
- Kim, Jihyun
Publication type:
Article
Hydrogen Sensing Using Pd-Functionalized Multi-Layer Graphene Nanoribbon Networks.
Published in:
Advanced Materials, 2010, v. 22, n. 43, p. 4877, doi. 10.1002/adma.201001798
By:
- Johnson, Jason L.;
- Behnam, Ashkan;
- Pearton, S. J.;
- Ural, Ant
Publication type:
Article
Persistent photoconductivity in MgZnO alloys.
Published in:
Semiconductors, 2009, v. 43, n. 5, p. 577, doi. 10.1134/S1063782609050054
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Kozhukhova, E. A.;
- Kim, H. S.;
- Norton, D. P.;
- Pearton, S. J.;
- Belogorokhov, A. I.
Publication type:
Article
The structure and thermal stability of tungsten-based contact metallizations to n-GaN.
Published in:
Scanning, 1998, v. 20, n. 7, p. 522, doi. 10.1002/sca.1998.4950200707
By:
- Cole, M. W.;
- Ren, F.;
- Pearton, S. J.
Publication type:
Article
GaN Electronics.
Published in:
Advanced Materials, 2000, v. 12, n. 21, p. 1571, doi. 10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO;2-T
By:
- Pearton, S. J.;
- Ren, F.
Publication type:
Article
Hydrogenated Amorphous Silicon, by R. A. Street, Cambridge University Press, Cambridge 1991, XIV, 417 pp., hardcover, £ 65.00; ISBN 0-521-37156-2.
Published in:
Advanced Materials, 1992, v. 4, n. 4, p. 306, doi. 10.1002/adma.19920040419
By:
- Pearton, S. J.
Publication type:
Article
The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3.
Published in:
Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 15, p. 1, doi. 10.1007/s10854-023-10628-y
By:
- Polyakov, A. Y.;
- Kuznetsov, A.;
- Azarov, A.;
- Miakonkikh, A. V.;
- Chernykh, A. V.;
- Vasilev, A. A.;
- Shchemerov, I. V.;
- Kochkova, A. I.;
- Matros, N. R.;
- Pearton, S. J.
Publication type:
Article
Electron irradiation of near-UV GaN/InGaN light emitting diodes.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700372
By:
- Lee, In‐Hwan;
- Polyakov, Alexander Y.;
- Smirnov, N. B.;
- Shchemerov, I. V.;
- Shmidt, N. M.;
- Tal'nishnih, N. A.;
- Shabunina, E. I.;
- Cho, Han‐Su;
- Hwang, Sung‐Min;
- Zinovyev, R. A.;
- Didenko, S. I.;
- Lagov, P. B.;
- Pearton, S. J.
Publication type:
Article
Spin Dynamics in ZnO-Based Materials.
Published in:
Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 161, doi. 10.1007/s10948-009-0551-0
By:
- Buyanova, I. A.;
- Murayama, A.;
- Furuta, T.;
- Oka, Y.;
- Norton, D. P.;
- Pearton, S. J.;
- Osinsky, A.;
- Dong, J. W.;
- Tu, C. W.;
- Chen, W. M.
Publication type:
Article

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