We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells.
- Authors
Egamberdiev, B. E.; Utamurodova, Sh. B.; Tachilin, S. A.; Karimov, M. A.; Rashidov, K. Yu.; Kakhramonov, A. R.; Kurbanov, M. K.; Saidov, D. Sh.; Turopova, S. U.
- Abstract
A technology has been developed for manufacturing solar cells based on silicon doped with impurity atoms of rare-earth elements holmium and gadolinium. It has been established that at a concentration of doping with holmium and gadolinium of 1017 cm–3, the efficiency of solar cells increases on average by 15% relative to the control ones. An increase in the radiation resistance of solar cells based on silicon doped with rare earth elements holmium and gadolinium during irradiation with gamma quanta is shown. Rare-earth elements holmium and gadolinium, introduced into silicon during growth, are present in it in the form of various impurity precipitations and complexes, being electrically inactive, actively interacting with vacancies and residual impurities, reduce the concentration of optically active oxygen and carbon, increasing the thermal and radiation stability of the parameters of the original silicon.
- Subjects
GADOLINIUM; PHOTOELECTRIC cells; SILICON solar cells; RARE earth metals; SOLAR radiation; SOLAR cell efficiency; HOLMIUM
- Publication
Applied Solar Energy (19349424), 2022, Vol 58, Issue 4, p490
- ISSN
0003-701X
- Publication type
Article
- DOI
10.3103/S0003701X22040065