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- Title
Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale.
- Authors
Kang, Seung-Han; Jo, Jeong-Wan; Lee, Jong Min; Moon, Sanghee; Shin, Seung Bum; Choi, Su Bin; Byeon, Donghwan; Kim, Jaehyun; Kim, Myung-Gil; Kim, Yong-Hoon; Kim, Jong-Woong; Park, Sung Kyu
- Abstract
The emergence of high-form-factor electronics has led to a demand for high-density integration of inorganic thin-film devices and circuits with full stretchability. However, the intrinsic stiffness and brittleness of inorganic materials have impeded their utilization in free-form electronics. Here, we demonstrate highly integrated strain-insensitive stretchable metal-oxide transistors and circuitry (442 transistors/cm2) via a photolithography-based bottom-up approach, where transistors with fluidic liquid metal interconnection are embedded in large-area molecular-tailored heterogeneous elastic substrates (5 × 5 cm2). Amorphous indium-gallium-zinc-oxide transistor arrays (7 × 7), various logic gates, and ring-oscillator circuits exhibited strain-resilient properties with performance variation less than 20% when stretched up to 50% and 30% strain (10,000 cycles) for unit transistor and circuits, respectively. The transistors operate with an average mobility of 12.7 (± 1.7) cm2 V−1s−1, on/off current ratio of > 107, and the inverter, NAND, NOR circuits operate quite logically. Moreover, a ring oscillator comprising 14 cross-wired transistors validated the cascading of the multiple stages and device uniformity, indicating an oscillation frequency of ~70 kHz. Developing integrated stretchable metal-oxide transistors and circuits is challenging. Here, Kang et al. leveraged molecular-tailored elastic substrates for enhanced adhesion, thus achieving high performance and logical operation across various circuits under high strain.
- Subjects
TRANSISTOR circuits; LOGIC circuits; FREQUENCIES of oscillating systems; LIQUID metals; BRITTLENESS; METAL oxide semiconductor field-effect transistors; TRANSISTORS
- Publication
Nature Communications, 2024, Vol 15, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-024-47184-w