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- Title
Investigation of Ge<sub>x</sub>Si<sub>1 –</sub><sub>x</sub>/Si Nanoheterostructures Grown by Ion-Beam Deposition.
- Authors
Alfimova, D. L.; Lunin, L. S.; Lunina, M. L.; Sysoev, I. A.; Pashchenko, A. S.; Danilina, E. M.
- Abstract
GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the GexS1 – x/Si layer. Finally, GexSi1 – x/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds.
- Publication
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, Vol 13, Issue 3, p493
- ISSN
1027-4510
- Publication type
Article
- DOI
10.1134/S1027451019030236