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- Title
Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.
- Authors
Bert, N. A.; Kolesnikova, A. L.; Nevedomsky, V. N.; Preobrazhenskii, V. V.; Putyato, M. A.; Romanov, A. E.; Seleznev, V. M.; Semyagin, B. R.; Chaldyshev, V. V.
- Abstract
Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented. It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests that stress relaxation occurs in the buried state of the quantum dot, rather than at the stage of the formation and growth of an InAs island on the GaAs surface. Models of internal dislocation relaxation of buried quantum dots are presented.
- Subjects
QUANTUM dots; GALLIUM; QUANTUM electronics; ARSENIC; SEMICONDUCTORS
- Publication
Semiconductors, 2009, Vol 43, Issue 10, p1387
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782609100236