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- Title
Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
- Authors
Zhukov, A.E.; Kovsh, A.R.; Mikhrin, S.S.; Semenova, E.S.; Maleev, N.A.; Vasil'ev, A.P.; Nikitina, E.V.; Kryzhanovskaya, N.V.; Gladyshev, A.G.; Shernyakov, Yu.M.; Musikhin, Yu.G.; Maksimov, M.V.; Ledentsov, N.N.; Ustinov, V.M.; Alferov, Zh.I.
- Abstract
A new method for the epitaxial formation of 1.3-μm injection lasers on GaAs substrates is reported. A metamorphic heterostructure with an In content of about 20% is deposited onto an intermediate buffer layer intended for mismatch strain relaxation. The laser active region is formed by quantum wells with a higher In content (about 40%). Lasers with 100-μm-wide stripes demonstrate room-temperature lasing at 1.29μm with a minimum threshold current density of 3.3 kA cm[sup 2] (0.4 kA cm[sup 2] at T = 85 K). © 2003 MAIK “Nauka / Interperiodica”.
- Subjects
HETEROSTRUCTURES; EPITAXY; QUANTUM wells; LASERS
- Publication
Semiconductors, 2003, Vol 37, Issue 9, p1119
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1610131