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- Title
Effects of deposition temperature and post-annealing on structure and electrical properties in (La<sub>0.5</sub>Sr<sub>0.5</sub>)CoO<sub>3</sub> films grown on silicon substrate.
- Authors
Li, Y. W.; Hu, Z. G.; Yue, F. Y.; Zhou, W. Z.; Yang, P. X.; Chu, J. H.
- Abstract
(La0.5Sr0.5)CoO3 (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10−3 Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10−4 Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.
- Subjects
THIN film research; SUBSTRATES (Materials science); ANNEALING of metals; PEROVSKITE; FERROELECTRIC thin films
- Publication
Applied Physics A: Materials Science & Processing, 2009, Vol 95, Issue 3, p721
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-008-4989-x