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- Title
Defect structure of high-resistance CdTe:Cl single crystals and MoOx/CdTe:Cl/MoOx heterostructures according to the data of high-resolution X-ray diffractometry.
- Authors
Fodchuk, I. M.; Kuzmin, A. R.; Hutsuliak, I. I.; Borcha, M. D.; Kotsyubynsky, V. O.
- Abstract
Clorine doped CdTe single crystals (CdTe:Cl) were grown by the traveling heater method. MoOx/CdTe:Cl/MoOx films were deposited using the reactive magnetron sputtering technique. The defect structure of the obtained single crystals and heterostructures was investigated using high-resolution X-ray diffractometry. The optimized models of dislocation systems in the CdTe:Cl single crystals were constructed based on the Thompson tetrahedron. The distribution of the intensity of diffracted X-rays as a function of reciprocal space coordinates and rocking curves was analyzed using the kinematic theory of X-ray scattering in real crystals. The experimental and theoretically predicted values of the helical dislocation densities in the CdTe:Cl and MoOx/CdTe:Cl crystals with perfect and mosaic structures were compared. Two-fold increase in the dislocation concentration in the MoOx/CdTe:Cl heterostructures as a result of compression deformations of the CdTe:Cl crystal lattice was found. The ~0.1 μm thick transition deformed layer at the boundary between the MoOx film and CdTe:Cl single crystal significantly affects the electrical and spectroscopic properties of the obtained systems as the materials for γ-radiation detection.
- Subjects
SINGLE crystals; HETEROSTRUCTURES; REACTIVE sputtering; X-rays; MAGNETRON sputtering; POSITRON annihilation
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, Vol 26, Issue 4, p415
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo26.04.415