We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation.
- Authors
Neimash, V. B.; Melnyk, V. V.; Fedorenko, L. L.; Shepeliavyi, P. Ye.; Strelchuk, V. V.; Nikolayenko, A. S.; Isaiev, M. V.; Kuzmich, A. G.
- Abstract
The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser radiation was experimentally evaluated and analyzed. As sources of excitation pulse laser radiation with the pulses duration equal to 20 ns and 150 µs and wavelengths equal to 535 and 1070 nm was used. The possibility of efficient tin-induced transformation of silicon from amorphous phase to crystalline one in the 200-nm thick layers of a-Si under the action of laser pulses with duration equal to 20 ns was shown. The spatial and temporal distributions of laser induced temperature rise was calculated to interpret experimental results.
- Subjects
AMORPHOUS silicon; CRYSTALLIZATION; TIN; PULSED lasers; RAMAN scattering; PHASE transitions; TEMPERATURE effect
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, Vol 20, Issue 4, p396
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo20.04.396