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- Title
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses.
- Authors
Vakiv, M.; Golovchak, R.; Chalyy, D.; Shpotyuk, M.; Ubizskii, S.; Shpotyuk, O.
- Abstract
Peculiarities of valence bands formation in As-ge - se semiconductor glasses have been investigated within AsxGexSe1-2x> cut of glass forming region by high-resolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe1-x and AsxSe1-x systems. In particular, increase in x leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se - Ge and Se - As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with Se - Se covalent bonds.
- Subjects
VALENCE bands; GERMANATE glasses; SELENIUM; CHALCOGENIDE glass; X-ray photoelectron spectroscopy; COVALENT bonds; SEMICONDUCTORS
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, Vol 15, Issue 1, p32
- ISSN
1560-8034
- Publication type
Article