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- Title
Microwave irradiation of gallium arsenide.
- Authors
Red’ko, R.
- Abstract
To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 ? before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the frequency 2.45 GHz and surface power density 7.5 W/cm². It was obtained that, already on the smallest irradiation exposure, the spectra of defects in researched samples essentially changed as well as concentrations of local centers changed. A ‘transfer’ of intensity from the band with the peak 1.04 eV to the that peaking at 1.3 eV was observed.
- Subjects
IRRADIATION; RADIATION; LUMINESCENCE; LIGHT sources; MAGNETRONS; ELECTRIC oscillators; GALLIUM arsenide
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, Vol 9, Issue 1, p97
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo9.01.097