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- Title
Growth of thick MOD-derived CeO buffer layer with less residual carbon for coated conductors.
- Authors
Wang, H.; Cao, L.; Wang, Y.; Jin, L.; Liu, J.; Huang, J.; Li, C.; Yu, Z.; Zhang, P.
- Abstract
120 nm thick CeO buffer layer with less residual carbon has been prepared on biaxially textured NiW substrate using a newly developed heat-treatment route by a metal organic deposition approach. The thickness enhancement of CeO buffer layer was achieved by multiple coatings. The residual carbon removal in CeO buffer layer was realized by introducing CO into annealing atmosphere at the post-annealed step. Various characteristic methods, including X-ray diffraction, X-ray photoelectron spectra, emission scanning electron microscopy and atomic force microscopy analyses techniques have been applied to investigate the performance of CeO film. The results show that thick high-quality textured CeO film with smooth and crack-free surface has been produced at annealing temperature below 1000 °C. Furthermore, the atomic concentration of C in such thick CeO buffer layer prepared using the post-annealed step by introducing CO into annealing atmosphere is obviously less than that in CeO film fabricated in reducing atmosphere of Ar-4 % H. In addition, the introduction of CO into post-annealing step is helpful to the decrease of oxygen vacancy defects in CeO film, which can suppress the generation of cracks in film. It suggests that CeO film fabricated by the newly developed heat-treatment route is proved to be a strong candidate as a buffer layer used for the further growth of the oxide film in coated conductors.
- Subjects
SEMICONDUCTOR films; SUPERCONDUCTING films; SOLID state physics; CARBON; LIGHT elements
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 11, p8949
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3577-z