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- Title
Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiN interlayer.
- Authors
Song, Shiwei; Liu, Yang; Liang, Hongwei; Yang, Dechao; Zhang, Kexiong; Xia, Xiaochuan; Shen, Rensheng; Du, Guotong
- Abstract
Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H-SiC by metal organic chemical vapor deposition using an in situ porous SiN interlayer. The SiN was formed in situ in the growth chamber by simultaneous flow of diluted silane and ammonia, leading to the formation of a randomly distributed mask layer and induced lateral overgrowth similar to conventional epitaxial lateral overgrowth of GaN. The full width at half maximum (FWHM) of X-ray diffraction peaks decreases dramatically by the SiN interlayer, indicating an improved crystalline quality. Also, it was found that the biaxial tensile stress in the GaN film was significantly reduced by in situ SiN interlayer from Raman spectra. Low temperature photoluminescence spectra exhibited a narrower FWHM by the SiN interlayer.
- Subjects
GALLIUM nitride; THIN films; TENSILE strength; CHEMICAL vapor deposition; X-ray diffraction; EPITAXY
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 8, p2923
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1192-4