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- Title
Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities.
- Authors
Demidov, E. S.; Danilov, Yu. A.; Podol'skiĭ, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Suchkov, A. I.
- Abstract
The possibility of laser synthesis of diluted magnetic semiconductors based on germanium and silicon doped with manganese or iron up to 10–15 at % has been shown. According to data on the electronic levels of 3 d atoms in semiconductors, Mn and Fe impurities are most preferable for realizing ferromagnetism in Ge and Si through the Ruderman-Kittel-Kasuya-Yosida mechanism. Epitaxial Ge and Si layers 50–110 nm in thickness were grown on gallium arsenide or sapphire single crystal substrates heated to 200–480°C. The content of a 3 d impurity has been measured by x-ray spectroscopy. The ferromagnetism of layers and high magnetic and acceptor activities of Mn in Ge, as well as of Mn and Fe in Si, are manifested in the observation of the Kerr effect, anomalous Hall effect, high hole conductivity, and anisotropic ferromagnetic resonance at 77–500 K. According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al2O3 substrate is no lower than 420, 500, and 77 K, respectively.
- Subjects
DILUTED magnetic semiconductors; DOPED semiconductors; FERROMAGNETISM; MAGNETIC properties of germanium crystals; KERR electro-optical effect; EFFECT of low temperature on Hall effect devices; FERROMAGNETIC resonance
- Publication
JETP Letters, 2006, Vol 83, Issue 12, p568
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364006120095