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- Title
STOCHASTIC RESONANCE AT THE ONSET OF FINITE- AMPLITUDE OSCILLATIONS IN SEMICONDUCTOR BREAKDOWN.
- Authors
RICHTER, R.; KITTEL, A.; PYRAGAS, K.; PARISI, J.
- Abstract
The phenomenon of stochastic resonance has been observed when looking at low-temperature impact ionization breakdown in p-type germanium crystals. Originally, such an effect was predicted for the class of bistable nonlinear dynamical systems which are subject to a periodic modulation as well as to random perturbation. We demonstrate first experimental evidence that stochastic resonance can also be detected in a monostable system, i.e., immediately below the onset of finite-amplitude oscillations during semiconductor breakdown.
- Publication
Fractals, 1993, Vol 1, Issue 4, p1068
- ISSN
0218-348X
- Publication type
Article
- DOI
10.1142/S0218348X93001179