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- Title
High-performance photodetectors based on low-defect CsPb<sub>1-x</sub>Zn<sub>x</sub>Br<sub>3</sub> quantum dots.
- Authors
Liao, Sainan; Chen, Mengwei; Li, Jing; Zhang, Rui; Yang, Yingping
- Abstract
All-inorganic CsPbBr3 perovskite quantum dots (QDs) have broad applications of optoelectronics field due to their high photoluminescence quantum yield, high charge carrier mobility, and bandgap tunability. However, the combination of the abundant trap states generated by purification and the instability caused by external factors such as water, oxygen, light, and heat poses a critical hurdle for the fabrication of high-performance photodetectors. In this work, CsPb1-xZnxBr3 QDs with low defect and high performance were prepared by passivating the CsPbBr3 lattice through Zn2+ doping. The approach of doping not only increases the effective Goldschmidt tolerance factor and improves the tolerance of phase changes caused by purification, but also acquires QDs with lower defect density and stable cubic phase. In the self-powered mode, the CsPb0.95Zn0.05Br3 QDs photodetectors have an extremely low dark current of 1.85 × 10–12 A, an ultrahigh on/off ratio of 107. Compared with CsPbBr3 QDs photodetectors, the responsivity(R) of CsPb0.95Zn0.05Br3 QDs photodetectors is increased by 200% from 0.08 A/W to 0.24 A/W, and the specific detectivity (D*) rate up to 6.19 × 1013 Jones which is more than an order of magnitude higher than that of the pristine photodetector.
- Publication
Journal of Materials Science: Materials in Electronics, 2024, Vol 35, Issue 10, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-024-12488-6