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- Title
Multistate resistance switching in Bi/PMN–PT(111) heterostructures by electric and magnetic field.
- Authors
Xu, Zhi-Xue; Yan, Jian-Min; Xu, Meng; Wang, Hui; Guo, Lei; Gao, Guan-Yin; Zheng, Ren-Kui
- Abstract
Bi thin films were grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN–PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN–PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN–PT suggest a promising approach for multistate resistive memories.
- Subjects
MAGNETIC fields; ELECTRIC fields; LEAD titanate; PULSED laser deposition; BISMUTH; THIN films; RESISTIVE force
- Publication
Journal of Materials Science: Materials in Electronics, 2020, Vol 31, Issue 4, p3585
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-020-02908-8