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- Title
Ion implantation effects of negative oxygen on copper nanowires.
- Authors
Rana, Pallavi; Narula, Chetna; Chauhan, R.; Rani, Anita; Gupta, Rashi; Kumar, Rajesh
- Abstract
Copper nanowires of diameter 80 nm were synthesized in polycarbonate membrane using template technique. Samples were then implanted with 160 keV O ion beam with varying particle fluence of 1 × 10, 5 × 10 and 1 × 10 ions/cm. The SRIM (Stopping and range of ions in matter) software was used to study the processes involved. Compositional analysis confirms implantation of oxygen ions and the stoichiometry of Cu:O was found to be 6:1 by weight % when implanted at 1 × 10 ions/cm. Scanning electron microscopy reveals no changes in morphology of nanowires on implantation. X-ray diffraction analysis showed no shifting in the '2θ' position of diffraction peaks however some new diffraction peaks of oxygen were seen. Implantation with oxygen ion led to the increased crystallite size and reduced strain. The conductivity of the nanowires was found to increase linearly with the ion fluence presenting constructive effect of negative ion implantation on copper nanowires.
- Subjects
ION implantation; COPPER; NANOWIRES; POLYCARBONATES; OXYGEN
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 14, p9998
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-6757-1