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- Title
Enhanced Responsivity of Photodetectors Realized via Impact Ionization.
- Authors
Ji Yu; Chong-Xin Shan; Qian Qiao; Xiu-Hua Xie; Shuang-Peng Wang; Zhen-Zhong Zhang; De-Zhen Shen
- Abstract
To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.
- Subjects
OPTOELECTRONIC devices; IONIZATION (Atomic physics); ELECTROMAGNETIC fields; ELECTRIC fields; SEMICONDUCTORS
- Publication
Sensors (14248220), 2012, Vol 12, Issue 2, p1280
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s120201280