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- Title
Diamond Diode Structures Based on Homoepitaxial Films.
- Authors
Rodionov, N. B.; Pal’, A. F.; Bol’shakov, A. P.; Ral’chenko, V. G.; Khmel’nitskiy, R. A.; Dravin, V. A.; Malykhin, S. A.; Altukhov, I. V.; Kagan, M. S.; Paprotskiy, S. K.
- Abstract
(m-i-p)-Structures with high-resistance epitaxial i-layers are fabricated on heavily doped p+-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (C-V and I-V characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (m-i-p)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).
- Subjects
HOMOEPITAXY; EPITAXY; ELECTROPHYSIOLOGY; ELECTRON microscopy; IONIZING radiation
- Publication
Journal of Communications Technology & Electronics, 2018, Vol 63, Issue 7, p828
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S1064226918070148