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Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.
Published in:
Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 5, p. 1, doi. 10.1007/s00339-020-03565-8
By:
- Li, Tingting;
- Wang, Xiaolei;
- He, Xiaobin;
- Tang, Bo;
- Han, Kai;
- Qi, Zeming;
- Jiang, Haojie;
- Xiong, Wenjuan;
- Zhang, Peng;
- Li, Junfeng;
- Yan, Jiang;
- Xiang, Jinjuan;
- Lin, Fujiang
Publication type:
Article
Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor.
Published in:
Advanced Functional Materials, 2021, v. 31, n. 17, p. 1, doi. 10.1002/adfm.202011077
By:
- Zeng, Binjian;
- Liu, Chen;
- Dai, Siwei;
- Zhou, Pingan;
- Bao, Keyu;
- Zheng, Shuaizhi;
- Peng, Qiangxiang;
- Xiang, Jinjuan;
- Gao, Jianfeng;
- Zhao, Jie;
- Liao, Min;
- Zhou, Yichun
Publication type:
Article
Experimental investigation on dipole and band offset affected by charge neutrality level modulation.
Published in:
Applied Physics A: Materials Science & Processing, 2022, v. 128, n. 8, p. 1, doi. 10.1007/s00339-022-05886-2
By:
- Zhou, Lixing;
- Xiang, Jinjuan;
- Wang, Xiaolei;
- Zhang, Yamin;
- Wang, Wenwu;
- Feng, Shiwei
Publication type:
Article
Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs.
Published in:
Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03767-4
By:
- Zhang, Zhaohao;
- Li, Yudong;
- Xu, Jing;
- Tang, Bo;
- Xiang, Jinjuan;
- Li, Junjie;
- Zhang, Qingzhu;
- Wu, Zhenhua;
- Yin, Huaxiang;
- Luo, Jun;
- Wang, Wenwu
Publication type:
Article
Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO 2 Films.
Published in:
Applied Sciences (2076-3417), 2021, v. 11, n. 9, p. 4295, doi. 10.3390/app11094295
By:
- Cai, Yuwei;
- Zhang, Qingzhu;
- Zhang, Zhaohao;
- Xu, Gaobo;
- Wu, Zhenhua;
- Gu, Jie;
- Li, Junjie;
- Xiang, Jinjuan;
- Yin, Huaxiang;
- Fortuna, Luigi;
- Grasso, Alfio Dario
Publication type:
Article
Atomic Layer Deposition (ALD) of Metal Gates for CMOS.
Published in:
Applied Sciences (2076-3417), 2019, v. 9, n. 11, p. 2388, doi. 10.3390/app9112388
By:
- Zhao, Chao;
- Xiang, Jinjuan
Publication type:
Article
The Challenges of Advanced CMOS Process from 2D to 3D.
Published in:
Applied Sciences (2076-3417), 2017, v. 7, n. 10, p. 1047, doi. 10.3390/app7101047
By:
- Radamson, Henry H.;
- Yanbo Zhang;
- Xiaobin He;
- Hushan Cui;
- Junjie Li;
- Jinjuan Xiang;
- Jinbiao Liu;
- Shihai Gu;
- Guilei Wang
Publication type:
Article
Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel.
Published in:
Semiconductor Technology, 2024, v. 45, n. 7, p. 1, doi. 10.1088/1674-4926/24010032
By:
- Yuting Chen;
- Xinlv Duan;
- Xueli Ma;
- Peng Yuan;
- Zhengying Jiao;
- Yongqing Shen;
- Liguo Chai;
- Qingjie Luan;
- Jinjuan Xiang;
- Di Geng;
- Guilei Wang;
- Chao Zhao
Publication type:
Article
Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology.
Published in:
Advanced Materials Interfaces, 2022, v. 9, n. 24, p. 1, doi. 10.1002/admi.202102351
By:
- Tian, Guoliang;
- Xu, Gaobo;
- Yin, Huaxiang;
- Yan, Gangping;
- Zhang, Zhaohao;
- Li, Lianlian;
- Sun, Xiaoting;
- Chen, Jia;
- Zhang, Yadong;
- Bi, Jinshun;
- Xiang, Jinjuan;
- Liu, Jinbiao;
- Wu, Zhenhua;
- Luo, Jun;
- Wang, Wenwu
Publication type:
Article
Miniaturization of CMOS.
Published in:
Micromachines, 2019, v. 10, n. 5, p. 293, doi. 10.3390/mi10050293
By:
- Radamson, Henry H.;
- He, Xiaobin;
- Zhang, Qingzhu;
- Liu, Jinbiao;
- Cui, Hushan;
- Xiang, Jinjuan;
- Kong, Zhenzhen;
- Xiong, Wenjuan;
- Li, Junjie;
- Gao, Jianfeng;
- Yang, Hong;
- Gu, Shihai;
- Zhao, Xuewei;
- Du, Yong;
- Yu, Jiahan;
- Wang, Guilei
Publication type:
Article
The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O 2 /He Plasmas for Thermopile Devices.
Published in:
Materials (1996-1944), 2020, v. 13, n. 19, p. 4278, doi. 10.3390/ma13194278
By:
- Zhou, Na;
- Li, Junjie;
- Mao, Haiyang;
- Liu, Hao;
- Liu, Jinbiao;
- Gao, Jianfeng;
- Xiang, Jinjuan;
- Hu, Yanpeng;
- Shi, Meng;
- Ju, Jiaxin;
- Lei, Yuxiao;
- Yang, Tao;
- Li, Junfeng;
- Wang, Wenwu
Publication type:
Article
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
Published in:
Nanomaterials (2079-4991), 2024, v. 14, n. 10, p. 837, doi. 10.3390/nano14100837
By:
- Radamson, Henry H.;
- Miao, Yuanhao;
- Zhou, Ziwei;
- Wu, Zhenhua;
- Kong, Zhenzhen;
- Gao, Jianfeng;
- Yang, Hong;
- Ren, Yuhui;
- Zhang, Yongkui;
- Shi, Jiangliu;
- Xiang, Jinjuan;
- Cui, Hushan;
- Lu, Bin;
- Li, Junjie;
- Liu, Jinbiao;
- Lin, Hongxiao;
- Xu, Haoqing;
- Li, Mengfan;
- Cao, Jiaji;
- He, Chuangqi
Publication type:
Article
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Published in:
Nanomaterials (2079-4991), 2021, v. 11, n. 3, p. 646, doi. 10.3390/nano11030646
By:
- Zhang, Qingzhu;
- Gu, Jie;
- Xu, Renren;
- Cao, Lei;
- Li, Junjie;
- Wu, Zhenhua;
- Wang, Guilei;
- Yao, Jiaxin;
- Zhang, Zhaohao;
- Xiang, Jinjuan;
- He, Xiaobin;
- Kong, Zhenzhen;
- Yang, Hong;
- Tian, Jiajia;
- Xu, Gaobo;
- Mao, Shujuan;
- Radamson, Henry H.;
- Yin, Huaxiang;
- Luo, Jun;
- Nogales, Emilio
Publication type:
Article
State of the Art and Future Perspectives in Advanced CMOS Technology.
Published in:
Nanomaterials (2079-4991), 2020, v. 10, n. 8, p. 1555, doi. 10.3390/nano10081555
By:
- Radamson, Henry H.;
- Zhu, Huilong;
- Wu, Zhenhua;
- He, Xiaobin;
- Lin, Hongxiao;
- Liu, Jinbiao;
- Xiang, Jinjuan;
- Kong, Zhenzhen;
- Xiong, Wenjuan;
- Li, Junjie;
- Cui, Hushan;
- Gao, Jianfeng;
- Yang, Hong;
- Du, Yong;
- Xu, Buqing;
- Li, Ben;
- Zhao, Xuewei;
- Yu, Jiahan;
- Dong, Yan;
- Wang, Guilei
Publication type:
Article
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Published in:
Nanomaterials (2079-4991), 2020, v. 10, n. 4, p. 793, doi. 10.3390/nano10040793
By:
- Li, Junjie;
- Li, Yongliang;
- Zhou, Na;
- Xiong, Wenjuan;
- Wang, Guilei;
- Zhang, Qingzhu;
- Du, Anyan;
- Gao, Jianfeng;
- Kong, Zhenzhen;
- Lin, Hongxiao;
- Xiang, Jinjuan;
- Li, Chen;
- Yin, Xiaogen;
- Wang, Xiaolei;
- Yang, Hong;
- Ma, Xueli;
- Han, Jianghao;
- Zhang, Jing;
- Hu, Tairan;
- Cao, Zhe
Publication type:
Article

Found: 15

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO<sub>2</sub>‐Based Ferroelectric Field‐Effect Transistor.

Experimental investigation on dipole and band offset affected by charge neutrality level modulation.

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs.

Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO 2 Films.

Atomic Layer Deposition (ALD) of Metal Gates for CMOS.

The Challenges of Advanced CMOS Process from 2D to 3D.

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel.

Improved Ferroelectricity and Endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology.

Miniaturization of CMOS.

The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O 2 /He Plasmas for Thermopile Devices.

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.

State of the Art and Future Perspectives in Advanced CMOS Technology.

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.