We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Accurate dry etching technique for germanium waveguide by using CHF<sub>3</sub> based inductively coupled plasma.
- Authors
Idris, A. S.; Jiang, H.; Hamamoto, K.
- Abstract
A CHF3 inductively coupled plasma (ICP) based dry etching method is proposed for accurate etching of Ge waveguides. CHF3 ICP based dry etching produces excellent anisotropy along with good selectivity with regards to regular polymeric photoresist, which leads to the elimination of under-cut. As a result, an almost vertical sidewall angle of 85° with an etching rate of 190 nm/min was realised with a relatively high selectivity ratio of 5:1 against regular photoresist.
- Subjects
INDUCTIVELY coupled plasma spectrometry; PLASMA etching; FLUOROFORM; GERMANIUM; PHOTORESISTS; WAVEGUIDES
- Publication
Electronics Letters (Wiley-Blackwell), 2016, Vol 52, Issue 22, p43
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2016.2846